| PART |
Description |
Maker |
| M470L1714BT0-CLB0 M470L1714BT0-CLA0 M470L1714BT0-C |
16Mx64 200pin DDR SDRAM SODIMM based on 8Mx16 Data Sheet
128MB DDR SDRAM MODULE(16Mx64 based on 8Mx16 DDR SDRAM)
|
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| P13B16212A P13B16212V M464S3254DTS PC133 M464S3254 |
Protective Eyeglasses RoHS Compliant: NA
Personal protection, Spectacles; RoHS Compliant: NA
Electrically Conductive Floor Mat 1/8 inch x 4 feet x 8 feet RoHS Compliant: NA
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD
32Mx64 SDRAM SODIMM based on 16Mx16 4Banks 8K Refresh3.3V Synchronous DRAMs with SPD
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M470L1713CT0 |
16Mx64 200pin DDR SDRAM SODIMM based on 16Mx8 Data Sheet
|
Samsung Electronic
|
| M470L1624BT0 |
16Mx64 200pin DDR SDRAM SODIMM based on 16Mx16 Data Sheet
|
Samsung Electronic
|
| M464S1654BT1 M464S1654BT1-C1H M464S1654BT1-C1L M46 |
16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
|
Samsung semiconductor
|
| HMP351S6AFR8C-S6 HMP351S6AFR8C-S5 HMP351S6AFR8C-Y5 |
512M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 2Gb version A
|
Hynix Semiconductor, Inc.
|
| ST62P20CM3/XXX ST62P10CM6/XXX ST62P10CM1/XXX ST62P |
8-BIT MICROCONTROLLER
IC, SDRAM, DDR400, 16MEGX16
1GB DDR SDRAM SODIMM 8位微控制
|
Exar, Corp.
|
| KMM466S823CT3 |
144pin SDRAM SODIMM
|
Samsung Semiconductor
|
| M470L1624FU0-CA2 M470L1624FU0-CB3 |
DDR SDRAM SODIMM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M470L6423EN0-CLB3 M470L6423EN M470L6423EN0-A2 M470 |
512MB Unbuffered SODIMM(based on sTSOP)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HMT351S6AFR8C-G7 HMT351S6AFR8C-H9 |
204pin DDR3 SDRAM SODIMM
|
Hynix Semiconductor
|
